2SK datasheet, 2SK circuit, 2SK data sheet: TOSHIBA – N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS), alldatasheet. 2SK, datasheet for 2SK – N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) provided by Toshiba Semiconductor. 2SK pdf . Toshiba 2SK 17 available from 2 distributors. Explore Discrete Semiconductors on Octopart: the fastest source for datasheets, pricing, specs and .

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I suppose you have no oscilloscope.

Santos on January 06, at Thanks for the advice – J. Burning is typical unstable Circuit. Datsaheet good for outputs for amps in the 25W size. I don’t think it’s the transistor but a problem elsewhere.

In fact that resistor together with the input capacitance messured in pF, see datasheet, forms a RC-lowpassfilter, that makes the fast MOSFETs somewhat slower, that gives a lower Open Loop Bandwidth, and so it can make the amp more stable! I have my eyes without leaving the current meeting, the current then flutuated from 75 to as high as mA.

2SK 데이터시트(PDF) – Inchange Semiconductor Company Limited

I rebuild the whole thing and this time I used around 50ma per pair, i. FETs are unipolar transistors as they involve single-carrier-type operation. The more common, cheaper, drain to the case are of a vertical construction. After another hour, it was overheated and destroyed. Do you have any 0. Put an small plastic capacitor parallell over feedback resistor goes from output to inputstage pF or pF See if it gets better if so you have found that amp was unstable. I guess 2sk5129 will not use SJ for this circult.


Is this the case? Amp fixing groman Thanks for datashete advice – akltam Many thanks for all of you who has helped.

Most other devices for example HexFETs don’t have a zero tempco until the drain current reaches the several amps region – so you’d need a bias control circuit! THese are my favorites: Check the devices data sheets. The bias currents you were using should be fine unless you have a way too high voltage across the transistors. What about the quality of these BUZ?

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Also the quality of these BUZ? The Field-Effect Satasheet FET is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.

From the circuit and to gate, placed close to the Gate Value can between about ohms By the way, try to keep the distance between circuit and MOSFETs short as possible!

I think you know about those. Produst description The Field-Effect Transistor FET is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.

The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. They are very difficult to stabilize without some sort of bias servo. Posted by akltam on January 05, at Alan djk is right! Phil Burning is typical unstable Circuit. I 2sk5129 not sure, but I think they use the same die design for some of their devices as the orginal Hitachi parts.


NT – akltam So you need a temperature compensation for the Sj,usualy a transistor multiplifier BE mouted in thermal contact with the output devices. They need dagasheet be as close as possible to the ouput transistors. Does anyone has such experience with SJ and SK These are of the lateral type construction.

That has satasheet me to believe that the Mosfet itself could be the cause. Have you put a scope on the output to look datashest or a high DC offset? Really lots of thanks here. Alan I don’t think the problem is with the transistors.

Two pairs were used per channel. Hi Alan You’re right – dataaheet voltages should be be no problem. And would try the parallel cap as suggested. Any experience on 2SJ and 2SK?

I was suggested that some of these devices are pretty unstable in datashfet first hours. Farnell Electronics is a distributor. I leave it on for a while feeling OK.

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Try up to R. Gate threshold voltage Vgs th.

Because these two terminals are normally connected to each other short-circuited internally, only three terminals appear in electrical diagrams. Any comment on the SJ Groman had a real good point about the bias voltage.

Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are dataaheet commutation speed and good efficiency at low voltages.